CdxZn1-xS/Pbs Thin film solar cell

Abstract

In this work, n-type CdxZn1-xS and p-type Pbs layers were optimized through chemical solution technique for solar cells. CdxZn1-xS was grown at 82°C while Pbs layers were grown at room temperature utilizing aqueous conditions. Optical constraints suitable for solar cells fabrication were investigated. CdxZn1-xS films had a band gap varying from 2.47eV (x=0.6) to 2.72eV (x=10), transmittance above 79% in VIS-NIR region with resistivity range of 9.5x10 to 1.22x10 squared Ω-cm. Pbs had a band gap of 0.89eV transmittance below 55% with a resistivity range of 6.7x10 to power three to 1.26 x 10 cubed Ω-cm appropriate for solar cell absorber layers. Their solar cell had a short circuit current 1sc=0.031A, open voltage Voc=0.37V, efficiency,n=0.9%, with a fill factor,ff=0.66